Work with Andrew Cao | NotedSource
West Virginia University
https://cv.notedsource.io/me/VOR8KD1J
Andrew Cao
West Virginia University
Research Expertise
Opto- and Nano-electronics
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Condensed Matter Physics
Materials Chemistry
Inorganic Chemistry
Mechanical Engineering
Mechanics of Materials
Control and Systems Engineering
Surfaces and Interfaces
Physical and Theoretical Chemistry
Biomaterials
Electrochemistry
Metals and Alloys
Bioengineering
Renewable Energy, Sustainability and the Environment
Publications
Design and growth of high-power gallium
nitride light-emitting diodes
Unknown Venue
High efficient 635nm resonant-cavity
light-emitting diodes with modified
electron stopped layers
2009 9th International Conference on
Numerical Simulation of Optoelectronic
Devices
2009
Diffusion and tunneling currents in
GaN/InGaN multiple quantum well
light-emitting diodes
IEEE Electron Device Letters
2002
Electrical effects of plasma damage in
p-GaN
Applied Physics Letters
1999
Defect generation in InGaN/GaN
light-emitting diodes under forward and
reverse electrical stresses
Microelectronics Reliability
2003
III–Nitride Light‐Emitting Diodes on Novel
Substrates
Wide Bandgap Light Emitting Materials
and Devices
2007
High-power and reliable operation of
vertical light-emitting diodes on bulk GaN
Applied Physics Letters
2004
Depth and thermal stability of dry etch
damage in GaN Schottky diodes
Applied Physics Letters
1999
High power flip-chip light emitting diode
Unknown Venue
Electrical characteristics of InGaN∕GaN
light-emitting diodes grown on GaN and
sapphire substrates
Applied Physics Letters
2004
Microstructural origin of leakage current
in GaN/InGaN light-emitting diodes
Journal of Crystal Growth
2004
Investigation of the Nonthermal Mechanism
of Efficiency Rolloff in InGaN
Light-Emitting Diodes
IEEE Transactions on Electron
Devices
2008
Blue and near-ultraviolet light-emitting
diodes on free-standing GaN substrates
Applied Physics Letters
2004
Temperature-dependent emission intensity
and energy shift in InGaN/GaN
multiple-quantum-well light-emitting
diodes
Applied Physics Letters
2003
GaN electronics for high power, high
temperature applications
Materials Science and Engineering:
B
2001
High voltage GaN Schottky rectifiers
IEEE Transactions on Electron
Devices
2000
Growth and fabrication of GaN/AlGaN
heterojunction bipolar transistor
Applied Physics Letters
1999
Effects of interfacial oxides on Schottky
barrier contacts to n- and
p-type GaN
Applied Physics Letters
1999
Ultrahigh Si+ implant activation
efficiency in GaN using a high-temperature
rapid thermal process system
Applied Physics Letters
1998
Alternative MOS devices for the
manufacture of high-density ICs
2007 International Semiconductor Device
Research Symposium
2007
GaN n- and p-type Schottky diodes: Effect
of dry etch damage
IEEE Transactions on Electron
Devices
2000
Growth and characterization of GaN PiN
rectifiers on free-standing GaN
Applied Physics Letters
2005
Effects of Charge Transport Materials on
Blue Fluorescent Organic Light-Emitting
Diodes with a Host-Dopant System
Micromachines
2019
Effects of Postannealing on the
Characteristics and Reliability of
Polyfluorene Organic Light-Emitting Diodes
IEEE Transactions on Electron
Devices
2019
On the origin of efficiency roll-off in
InGaN-based light-emitting diodes
Journal of Applied Physics
2008
Rapid efficiency roll-off in high-quality
green light-emitting diodes on
freestanding GaN substrates
Applied Physics Letters
2009
Creation of high resistivity GaN by
implantation of Ti, O, Fe, or Cr
Journal of Applied Physics
2000
Schottky diode measurements of dry etch
damage in n- and p-type GaN
Journal of Vacuum Science &
Technology A: Vacuum, Surfaces, and
Films
2000
Temperature-dependent electroluminescence
of AlGaN-based UV LEDs
IEEE Electron Device Letters
2006
Concentration quenching of
electroluminescence in neat Ir(ppy)3
organic light-emitting diodes
Journal of Applied Physics
2010
Effects of plasma treatment on the Ohmic
characteristics of Ti∕Al∕Ti∕Au contacts to
n-AlGaN
Applied Physics Letters
2006
Al composition dependence of breakdown
voltage in AlxGa1−xN Schottky rectifiers
Applied Physics Letters
2000
Thermal stability of W and WSix contacts
on p-GaN
Applied Physics Letters
1998
Removing plasma-induced sidewall damage in
GaN-based light-emitting diodes by
annealing and wet chemical treatments
Journal of Vacuum Science &
Technology B: Microelectronics and
Nanometer Structures Processing,
Measurement, and Phenomena
2009
Effects of PEDOT:PSS:GO composite hole
transport layer on the luminescence of
perovskite light-emitting diodes
RSC Advances
2020
Electroluminescence of green CdSe/ZnS
quantum dots enhanced by harvesting
excitons from phosphorescent molecules
Applied Physics Letters
2010
Performance enhancement of organic
light-emitting diodes by chlorine plasma
treatment of indium tin oxide
Applied Physics Letters
2012
Optimization of current spreading metal
layer for GaN/InGaN-based light emitting
diodes
Solid-State Electronics
2002
Investigation of radiative tunneling in
GaN/InGaN single quantum well
light-emitting diodes
Solid-State Electronics
2002
Temperature Dependence and Current
Transport Mechanisms in
AlxGa1−xN Schottky
Rectifiers
MRS Proceedings
2000
GaN/AlGaN HBT fabrication
Solid-State Electronics
2000
Plasma damage in p-GaN
Journal of Electronic Materials
2000
Temperature dependence of GaN high
breakdown voltage diode rectifiers
Solid-State Electronics
2000
Influence of defects on electrical and
optical characteristics of GaN/InGaN-based
light-emitting diodes
Solid State Lighting II
2002
Investigation of neutralized (NH4)2S
solution passivation of GaAs (100)
surfaces
Applied Physics Letters
1997
Advanced Processing of GaN for Electronic
Devices
Critical Reviews in Solid State and
Materials Sciences
2000
Direct-current characteristics of
pnp AlGaN/GaN heterojunction
bipolar transistors
Applied Physics Letters
2000
Surface and bulk leakage currents in high
breakdown GaN rectifiers
Solid-State Electronics
2000
Cathodoluminescence mapping and selective
etching of defects in bulk GaN
Journal of Crystal Growth
2006
Quenching-enhanced shift of recombination
zone in phosphorescent organic
light-emitting diodes
Organic Electronics
2010
Gallium sulfide thin film grown on GaAs(1
0 0) by microwave glow discharge
Journal of Crystal Growth
1997
High breakdown voltage Au/Pt/GaN Schottky
diodes
Journal of Vacuum Science &
Technology A: Vacuum, Surfaces, and
Films
2000
High Current, Common-Base GaN-AIGaN
Heterojunction Bipolar Transistors
Electrochemical and Solid-State
Letters
1999
Device and circuit modeling of GaN/InGaN
light emitting diodes (LEDs) for optimum
current spreading
Solid-State Electronics
2003
Effect of N2 discharge treatment on
AlGaN/GaN high electron mobility
transistor ohmic contacts using
inductively coupled plasma
Journal of Vacuum Science &
Technology A: Vacuum, Surfaces, and
Films
2000
Redistribution and activation of implanted
S, Se, Te, Be, Mg, and C in GaN
Journal of Vacuum Science &
Technology A: Vacuum, Surfaces, and
Films
1999
High-brightness organic light-emitting
diodes based on a simplified hybrid
structure
Applied Physics Letters
2012
Temperature-dependent electroluminescence
in InGaN/GaN multiple-quantum-well
light-emitting diodes
Journal of Electronic Materials
2003
Electrical properties and defect states in
undoped high-resistivity GaN films used in
high-power rectifiers
Journal of Vacuum Science &
Technology B: Microelectronics and
Nanometer Structures Processing,
Measurement, and Phenomena
2000
Degradation of phosphorescent organic
light-emitting diodes under pulsed current
stressing
Organic Electronics
2013
Growth and Device Performance of GaN
Schottky Rectifiers
MRS Internet Journal of Nitride
Semiconductor Research
1999
Electroluminescence observation of
nanoscale phase separation in quaternary
AlInGaN light-emitting diodes
Applied Physics Letters
2010
High temperature characteristics of
GaN-based heterojunction bipolar
transistors and bipolar junction
transistors
Solid-State Electronics
2000
Redistribution of implanted dopants in GaN
Journal of Electronic Materials
1999
Investigation of the electronic properties
of nitrogen vacancies in AlGaN
Journal of Applied Physics
2009
Surface chemical and electronic properties
of plasma‐treated n‐type
Al0.5Ga0.5N
physica status solidi (a)
2007
Homoepitaxial growth and electrical
characterization of GaN-based Schottky and
light-emitting diodes
Journal of Crystal Growth
2007
Effect of thermal stability of GaN
epi-layer on the Schottky diodes
Solid-State Electronics
2000
Simulation of GaN/AlGaN heterojunction
bipolar transistors: part I – npn
structures
Solid-State Electronics
2000
Implanted p–n junctions in GaN
Solid-State Electronics
1999
Characterization of zinc-tin-oxide films
deposited by thermal co-evaporation
Thin Solid Films
2012
Efficient and reliable green organic
light-emitting diodes with Cl2
plasma-etched indium tin oxide anode
Journal of Applied Physics
2012
Conjugated Polymer Films for
Piezoresistive Stress Sensing
IEEE Electron Device Letters
2009
Current and Temperature Dependent
Characteristics of Deep-Ultraviolet
Light-Emitting Diodes
IEEE Transactions on Electron
Devices
2007
Optical characterization of CdSe quantum
dots with metal chalcogenide ligands in
solutions and solids
Applied Physics Letters
2011
Passivation of the GaAs(100) surface with
a vapor-deposited GaS film
Journal of Vacuum Science &
Technology B: Microelectronics and
Nanometer Structures Processing,
Measurement, and Phenomena
1998
Improved Efficiency of Perovskite
Light-Emitting Diodes Using a Three-Step
Spin-Coated CH3NH3PbBr3 Emitter and a
PEDOT:PSS/MoO3-Ammonia Composite Hole
Transport Layer
Micromachines
2019
Impact of Dopant Aggregation on the EL of
Blue Fluorescent Host-Dopant Emitters
IEEE Electron Device Letters
2019
Thermal and Nonthermal Factors Affecting
the Lifetime of Blue Phosphorescent
Organic Light-Emitting Diodes
IEEE Transactions on Electron
Devices
2018
High-current stressing of organic
light-emitting diodes with different
electron-transport materials
Microelectronics Reliability
2017
Thermal Plasma Synthesis of Crystalline
Gallium Nitride Nanopowder from Gallium
Nitrate Hydrate and Melamine
Nanomaterials
2016
Rapid Thermal Processing of Implanted GaN
up to 1500°C
MRS Internet Journal of Nitride
Semiconductor Research
1999
Device Processing for GaN High Power
Electronics
MRS Proceedings
2000
Passivation of GaAs/AlGaAs heterojunction
bipolar transistors by S2Cl2 solution
Applied Physics Letters
1997
Role of wide bandgap host in the
degradation of blue phosphorescent organic
light-emitting diodes
Journal of Applied Physics
2017
Effects of Localized Heating at
Heterointerfaces on the Reliability of
Organic Light-Emitting Diodes
IEEE Electron Device Letters
2015
Improved luminescence from CdSe quantum
dots with a strain-compensated shell
Applied Physics Letters
2013
Evaluation of all-inorganic CdSe quantum
dot thin films for optoelectronic
applications
Nanotechnology
2012
Cl[sub 2]/Ar High-Density-Plasma Damage in
GaN Schottky Diodes
Journal of The Electrochemical
Society
2000
Oxygen implant isolation of n-GaN
field-effect transistor structures
Journal of Vacuum Science &
Technology B: Microelectronics and
Nanometer Structures Processing,
Measurement, and Phenomena
1999
Simplified phosphorescent organic
light-emitting diodes with a WO3-doped
wide bandgap organic charge transport
layer
Organic Electronics
2015
Inductively coupled plasma damage in GaN
Schottky diodes
Journal of Vacuum Science &
Technology B: Microelectronics and
Nanometer Structures Processing,
Measurement, and Phenomena
1999
Complete suppression of surface leakage
currents in microperforated blue
light-emitting diodes
Applied Physics Letters
2009
Morpho butterfly wing scales demonstrate
highly selective vapour response
Nature Photonics
2007
Stress-induced current and luminescence
modulations in an organic light-emitting
device
Applied Physics Letters
2010
Low-resistance, highly transparent, and
thermally stable Ti/ITO Ohmic contacts to
n-GaN
Journal of Vacuum Science &
Technology B: Microelectronics and
Nanometer Structures Processing,
Measurement, and Phenomena
2009
Injection current‐dependent quantum
efficiency of InGaN‐based light‐emitting
diodes on sapphire and GaN substrates
physica status solidi (a)
2009
GaN Photonic Crystal-Based, Enhanced
Fluorescence Biomolecule Detection System
MRS Proceedings
2007
Simulation of GaN/AlGaN heterojunction
bipolar transistors: part II – pnp
structures
Solid-State Electronics
2000
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